Toshiba begins shipment of study samples mobile memory 3D NAND with 32 GB memory for next generation smartphones

The company Micron Technology introduced its first product on the base of 3D NAND, optimized for use in mobile devices and corresponding specifications for Universal Flash Storage (UFS) 2.1. It’s capacity is 32 GB. Verify that the 32-layer chip uses the memory with a floating gate. According to Micron, the die area equal to 60,217 mm2 is the minimum for the industry, being about three times less than that of planar memory the same density.

The manufacturer notes the use of the interface LPDDR4X, which will significantly reduce energy consumption in single-hull products memory DRAM by reducing the voltage supply circuits of the I / o from 1.1 to 0.6 V.

Memory 3D NAND is Packed in a case PoP the size of 9 x 9 mm or MCP dimensions 8.5 in. x 11 mm. Other technical details manufacturer yet does not disclose, promising to make a new memory widely available until the end of the year. Delivery trial samples has already begun. According to Acer, this memory is designed for smartphones next-generation relating to the upper segment.

Source: Micron

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