The transition to the production of DRAM according to the norms of less than 10 nm using EUV is still in question due to high costs
Major manufacturers of DRAM chips at the stage of technological standards 1x/1y will continue to use the multiple exposure, whereas the transition to lithography in the hard ultraviolet range (EUV) phase of less than 10 nm still remains open to question. It is reported by Digitimes, citing industry sources.
Previously it was assumed that the transition to EUV will happen when rules will be less than 20 nm, but the high cost of equipment pushed Samsung and other DRAM manufacturers. As stated, the industry will stick immersion lithography with wavelength 193 nm and multiple exposures, while norms are more than 10 nm.
According to reports, Samsung is preparing to transition to the production of DRAM using EUV. But it is unknown if they follow her example, SK Hynix and Micron Technology. The fact that the development of EUV represents a huge investment.
As for the output of logic chips, where Samsung is a contract manufacturer, the company intends to develop EUV in 2018, the first generation of the 7-nanometer process technology.
According to the forecast of the company ASML, the sole supplier of EUV lithography equipment, the industry will adopt the new technology in 2019. Among those who first master the EUV, named Globalfoundries, Intel, Samsung, SK Hynix and TSMC.