Samsung will start manufacturing flash memory Z-and the corresponding NAND drives this year
In the beginning of this year Samsung first demonstrated a solid-state drive based on memory Z-NAND. Model with a volume of 800 GB was characterized by the performance of read and write 750 000 and 160 000 IOPS respectively, and a write speed of 3.2 GB/s.
According to new figures, production of Z memory-NAND and the corresponding controller should begin this year. Samsung has already begun to discuss supply options with customers and established test production.
In addition, it became known that the memory Z-NAND refers to the type of SLC, that is capable of storing only one bit of data in each cell. In theory, this should ensure good reliability of a memory, and the benefits, in terms of performance and speed and so can be seen on the example shown in the March drive.
It is worth noting that a source says small capacity circuits Z NAND, although, judging by early reports, the first on the market must be SSD with capacity from 1 TB to 4 TB.