Samsung Electronics unveiled a 64-layer flash memory V-NAND SSD and record volume

Samsung Electronics company presented at the event Flash Memory Summit 2016 latest solutions based on flash memory. In particular, it is shown the flash memory chips with a volume layout of V-NAND the fourth generation and large storage capacity.

New flash memory V-NAND enables 64 layer — 30% more than its predecessor. Each cell can store three bits of information. The density of the crystal is 512 GB, and it supports data transfer rate up to 800 Mbit/s. These parameters are a record for the industry. In the serial products of a new memory will appear in the next quarter.

The first example of the use of the new memory was solid state drive size 2.5 » capacity 32 TB with SAS interface. According to Samsung, it is the most capacious SSD in its category. It uses 512 new chips V-NAND, which is divided into 16 pieces in 32 packages. Serial production of such SSD is scheduled to begin in 2017, and by 2020, Samsung expects to begin production of the SSD with a volume of 100 TB.

The exposition is crowned with single-SSD Samsung 1TB in the package type BGA. It includes crystals V-NAND, the LPDDR4 DRAM and controller. This drive shows a read speed of up to 1500 MB/s and write speed up to 900 MB/s.

In addition, the manufacturer announced the creation of SSD Z SSD, which are characterized by very low latency and high data transfer rate, overcoming the limitations of present models with the NVMe interface. These drives Samsung has promised to introduce next year.

Source: Samsung Electronics

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