Samsung begins mass production of 64-layer flash memory V-NAND

Samsung Electronics announced the beginning of serial production of chips 64-layer flash memory V-NAND flash density 256 GB, designed for drives used in servers, PCs, and mobile devices.

Shipment of study samples SSD that use this memory, began in January. Now the manufacturer is developing products in other categories, including embedded storage UFS memory card, which he expects to present later this year.

Increasing the release of 64-layer chip V-NAND, which otherwise is called V-NAND, the fourth generation, the manufacturer expects to end the year, they will make up more than half of all its capacity on a flash memory.

Chips V-NAND flash density 256 GB, stored in each cell by three bits, support data transfer rate 1 Gbit/s, which is a record value for the flash-memory of type NAND. In addition, memory V-NAND is characterized by a minimum page write time (tPROG) is 500 microseconds. This value is about four times smaller than the value typical for planar flash memory technology with 10-nanometer class.

Compared with the chip 48-layer flash memory V-NAND flash density 256 GB, 64-layer memory V-NAND the same density is 30% more energy-efficient because the supply voltage is reduced from 3.3 V to 2.5 V. the reliability increased by 20%.

Source: Samsung Electronics

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